Authors:
J. G. Quin˜ones-Galva´n
Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740 Me´xico, D.F. 07360, Mexico

J. S. Arias-Cero´n
CICATA-IPN, Unidad Legaria, Me´xico D.F. 11500, Mexico

F. de Moure-Flores
Facultad de Qui´mica, Materiales, Universidad Auto´noma de Quere´taro, Quere´taro 76010, Mexico

A. Herna´ndez-Herna´ndez
A. Guille´n-Cervantes
J. Santoyo-Salazar
J. G. Mendoza-Alvarez
M. Mele´ndez-Lira
Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740 Me´xico, D. F. 07360, Mexico

Silicon carbide thin films were grown by laser ablation on silicon substrates at different deposition temperatures using SiC powders as target material. The structural, morphological, compositional, and optical properties were studied as a function of the deposition temperature. The 6H-SiC crystalline phase was observed by Raman spectroscopy, x-ray diffraction, and transmission electron diffraction without the presence of any other polytype. In the room temperature photoluminescence spectra, a broad band was observed in the visible region which suggests that these films can have applications on silicon based optoelectronics.